Abstract
This paper presents investigations in focused ion beam structuring and modification of indium phosphide/indium gallium arsenide phosphide based photonic crystal power splitters. The optical transmission and splitting ratio were compared to devices fabricated with electron beam lithography and inductively-coupled plasma, reactive ion etching. Prototyping of novel photonic designs, chip modifications, repair, and post-processing with focused ion beams may well reduce time to market in the telecommunication industry.
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