Abstract
We report on the demonstration of focused ion beam (FIB) etched nitride/air distributed Bragg reflector (DBR) gratings as cavity mirror facets of violet InGaN/GaN multiple quantum wells edge emitting laser diodes (LD). The nitride/air DBRs consisted of fifth order Bragg semiconductor wall and third order Bragg air gap with the depths around 1.2 micron to 1.5 micron were successfully achieved by focused Ga ion beam (FIB) milling as backside laser facets on GaN-based laser diodes. Under pulsed current injection at room temperature, sharp laser emissions were observed at the wavelength between 398 to 401 nm. The threshold currents of stripe and ridge lasers with nitride/air DBR mirror facets were found to be respectively lower than the related LDs with cleaved facets. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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