Focused ion beam-assisted manipulation of single and doubleβ-SiC nanowires and their thermal conductivity measurements by the four-point-probe 3-ω method

Abstract

Control of one-dimensional (1D) nanostructures is demonstratedin this paper by selectively placing and aligning silicon carbide (β-SiC) nanowires (NWs). We developed a reliable and highly reproducible way of placing a single ordouble SiC NW on pre-patterned electrodes by using a focused ion beam and a nanomanipulator. 3-ω signals obtained by the four-point-probe method were used in measuring the thermalconductivity of the NWs. The thermal conductivities of the placed single and doubleβ-SiC NWs wereobtained at 82 ± 6 W mK − 1 and 73 ± 5 W mK − 1, respectively. The proposed technique offers new possibilities for manipulating andevaluating 1D nanoscale materials.