Abstract
In this paper we describe the fabrication of a two-dimensional photonic band gap structure by focused electron beam induced deposition. Structure geometry is computed in order to create a light-trapping effect at 632 nm wavelength. Deposits produced using tetraethyl orthosilicate (SiO 4 C 8 H 20 ) as precursor were studied to determine their chemical composition and geometrical dimensions. The deposited material has a refractive index n ̃ =1.85+ i 3.9×10 −4 at 632 nm. Transmission electron microscopy revealed deposits obtained at low currents (100 pA) are amorphous. The structure was deposited on a quartz prism, coated with a transparent conducting antimony-doped tin oxide layer to minimize electron beam drifts and distortions. Multiple beam re-alignments during the deposition assured drift compensation. Optical characterisation of the photonic band gap effect is currently under investigation.
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