Abstract
AbstractEfficient generation of polarized single photons or entangled photon pairs is crucial for the implementation of quantum key distribution (QKD) systems. Self organized semiconductor quantum dots (QDs) are capable of emitting on demand one polarized photon or an entangled photon pair upon current injection. Highly efficient single‐photon sources consist of a pin structure inserted into a microcavity where single electrons and holes are funneled into an InAs QD via a submicron AlOx aperture, leading to emission of single polarized photons with record purity of the spectrum and non‐classicality of the photons. A new QD site‐control technique is based on using the surface strain field of an AlOx current aperture below the QD.GaN/AlN QD based devices are promising to operate at room temperature and reveal a fine‐structure splitting (FSS) depending inversely on the QD size. Large GaN/AlN QDs show disappearance of the FSS. Theory also suggests QDs grown on (111)‐oriented GaAs substrates as source of entangled photon pairs.
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