Fluxless Wafer Bonding in Vacuum Using Electroplated Sn–Ag Layers

Abstract

A wafer-to-wafer bonding process using Sn-Ag solder without any flux is successfully developed. This fluxless or flux-free feature makes void-free and uniform bonding layers possible. This is in contrast to the fluxing process employed in nearly all soldering processes adapted in the electronic industry. With the use of flux, the flux or flux residues are easily trapped in the solder joint, resulting in voids and uneven solder layers. This is particularly true if the bonding area is large, such as the entire wafer. Thus, void-free wafer bonding using solders has never been reported. It is thus clear that the key to achieve void-free wafer soldering is to eliminate flux completely. The new fluxless process is performed in a vacuum furnace built in house to inhibit solder oxidation. To prevent oxidation during solder manufacturing, a thin Ag capping layer is plated over the Sn layer right after the Sn layer is plated over an entire 2-in silicon wafer having Cr/Au under bump metallurgy (UBM). This outer Ag layer is critical in preventing the inner Sn layer from oxidation when the wafer is exposed to air. The Si wafer with Cr/Au/Sn/Ag structure is bonded with another Si wafer with Cr/Au at 240degC in the vacuum furnace. To evaluate the joint quality and study the microstructure and composition, scanning acoustic microscopy (SAM), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX) are used. A solder joint with only 1% void area is accomplished. The initial success of this process illustrates that it is indeed possible to bond entire wafers together with a thin metallic joint of high quality. This fluxless bonding technique can be extended to bonding wafers of different materials for new device and packaging applications.