Flux shuttling--New method for the nondestructive readout of superconductive memory cells

Abstract

A novel technique for the nondestructive readout (NDRO) of a superconductive memory cell is described. The method is of rather general applicability since it can be utilized for the NDRO of many of the known persistent current cells. A description of the technique in comparison to previous NDRO methods as well as experiments on a memory cell which utilizes this new NDRO technique are discussed. The possibility of using this scheme for random access and associative memories is briefly examined.