Abstract
Silicon-doped Y-123 superconductors were prepared by melting and rapid solidfication process. The as-solidified samples essentially consisted of nonsuperconductive, metastable phases. Subsequent annealing at 945°C crystallized the sample into the 1-2-3 superconducting phase with T c =80–90 K. Manetization measurements indicate that Si-doping (e.g. with 0.7 at.% Si) increases intragrain J c at 77 K, H =0.9 T by a factor of six. This significant improvement in J c (enhanced flux pinning) is tentati attributed to unknown defect structures induced by finely dispersed Si-rich particles.
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