Abstract
Pinning force densities Fps for amorphous Mo0.75Si0.25 films (200∼20 nm thick) for the use of memory devices utilizing Abrikosov vortices have been examined in the perpendicular and parallel fields. The maximum Fpmaxs in the perpendicular field decreased with decreasing film thickness. On the other hand, the Fpmaxx dependence on film thickness in the parallel field was found to have a peak at a thickness around 50 nm. Furthermore, Fp values for the thinner films in the parallel field became one order of magnitude larger than those in the perpendicular field. Pinning in these films, including the effect of a Si underlayer and overlayer for protection, was discussed.
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