Flux Method Growth of Large Size Group IV–V 2D GeP Single Crystals and Photoresponse Application

Shuqi Zhao,Shilei Wang,Limei Wei,Shanpeng Wang,Tongtong Yu,Ziming Wang,Xiaohua Chen

doi:10.3390/cryst11030235

Shuqi Zhao, Shilei Wang + Show 5 more

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https://doi.org/10.3390/cryst11030235

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Journal: Crystals	Publication Date: Feb 26, 2021
Citations: 3	License type: CC BY 4.0

Affiliation: Shandong University

Abstract

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.

Highlights

Two-dimensional (2D) materials have attracted much attention due to their fascinating optical, electronic, mechanical, and magnetic properties
The results indicate that the elements of Ge and P were relatively evenly distributed in the GeP crystal
High-quality and large-sized bulk GeP single crystals with a size of 20 × 15 × 5 mm3 were successfully grown by the flux growth method

Summary

Introduction

Two-dimensional (2D) materials have attracted much attention due to their fascinating optical, electronic, mechanical, and magnetic properties. The first exfoliated 2D material, graphene, is promising for electronic and optoelectronic applications due to its excellent and unusual properties (exceptional thermal conductivity, excellent optical transmittance, and high carrier mobility) [1,2,3,4,5]. The intrinsic low-symmetry lattice structure can induce anisotropic optoelectronic properties, which is both scientifically interesting and potentially useful [10,11]. It provides great opportunities for designing high-performance optoelectronic devices [12,13]. It is meaningful to exploit novel air-stable 2D materials with high performance for optoelectronic applications

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