Abstract
Mg- or Rb-doped single crystals of potassium gallotitanogallate (KGGTO), K x [Ga 8Ga 8+ x Ti 16− x O 56], were grown from a flux melt of the system K 2OMoO 3. The value of x in undoped KGGTO crystals is nearly 1.0. The value of x in the Mg-doped KGGTO crystals had a maximum of 1.6 when Ga was replaced by Mg. This increment for Mg doping was accompanied by an increase in ionic conductivity at high frequency, and by a small increase of lattice parameters. The Rb content in the Rb-doped KGGTO crystals had a maximum of 0.6 wt%, i.e. (K 1.0Rb 0.2) 1.2. The value of x did not change within error. This was accompanied a small increase of ionic conductivity at low frequency. Although both pure and Mg-doped KGGTO crystals melted incongruently at 1530 °C, different exotherms were seen in the DTA curves during cooling.
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