Abstract
Phase relationships in the CuGaTe2–ZnTe system have been investigated in order to establish the growth techniques for the relative quaternary phases. A number of single crystals of Cu2(1-x)Zn4xGa2(1-x)Te4 composition has been grown by using ZnCl2 as flux material. The best growth conditions are: molar ratio flux to solid 20: 1; cooling rate, above 700°C, 3°C hr-1. All crystals behave as p-type semiconductor. The analysis of absorption and reflection spectra give evidence for a heavy doping of crystals. The direct gaps evaluated for crystals of composition CuZn6GaTe8 and CuZn8GaTe10 are respectively Eg=1.49 eV and Eg=1.56 eV at room temperature.
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