Abstract
The flux-assisted deposition of the active phosphor layer in the highest efficiency, true blue (CIE coordinates of x = 0.14 y = 0.12 ) electroluminescent (EL) devices based on SrGa 2S 4:Ce,Cl is described. Luminances of 78 cd/m 2 luminous efficiencies of 0.017 lm/W at a transferred charge of 1 μC/cm 2 with 1 kHz/50 μs bipolar square wave excitation were achieved. The influence of the coevaporated fluxes LiF and NaF in addition to the elements Sr, Ga, S, and the activator starting material CeCl 3, on film growth is examined. The relation between Ga Sr , S Sr , flux Sr rates, and substrate temperature ( T Sub) on phase homogeneity due to flux, crystal quality, film thickness, and device performance is described.
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