Abstract
Flux creep in ${\mathrm{Bi}}_{2}$${\mathrm{Sr}}_{2}$${\mathrm{CaCu}}_{2}$${\mathrm{O}}_{8}$ crystals exhibits two different regimes as a function of time, as well as of temperature and magnetic field. The short-time, low-temperature regime has a peak in current density versus field, which is enhanced by irradiation defects. The long-time, high-temperature regime has a monotonic and sharp falloff (step) in current density versus magnetic field, which is suppressed by irradiation defects. The former is identified with bulk pinning, and the latter with a surface barrier.
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