Abstract
Phase-change memory (PCM) is one of the most promising non-volatile memory technologies and is finding applications in areas such as storage-class memory and emerging non-von Neumann computing systems. Even though powerful physics-based models have been developed for these devices, there is a lack of simple and accurate circuit models to describe these elements. In this brief, we exploit memristor theory to obtain a simple and reliable circuit model based on electrical variables such as charge and flux . This model is based on experimental measurements of PCM devices fabricated in the 90 nm technology node.
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