Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system

Min-Hwi Kim,Min-Hoi Kim,Sin-Hyung Lee,Hea-Lim Park,Jaewon Jang,In Man Kang,Jin-Hyuk Bae

doi:10.1038/s41528-021-00132-w

Abstract

In this study, we propose an effective strategy for achieving the flexible one organic transistor–one organic memristor (1T–1R) synapse using the multifunctional organic memristor. The dynamics of the conductive nanofilament (CF) in a hydrophobic fluoropolymer medium is explored and a hydrophobic fluoropolymer-based organic memristor is developed. The flexible 1T–1R synapse can be fabricated using the solution process because the hydrophobic fluorinated polymer layer is produced on the organic transistor without degradation of the underlying semiconductor. The developed flexible synapse exhibits multilevel conductance with high reliability and stability because of the fluoropolymer film, which acts as a medium for CF growth and an encapsulating layer for the organic transistor. Moreover, the synapse cell shows potential for high-density memory systems and practical neural networks. This effective concept for developing practical flexible neural networks would be a basic platform to realize the smart wearable electronics.

Highlights

Hardware-based neural network systems have been drawing attention as potential candidates for realizing the generation of computing systems beyond von Neumann architectures[1,2,3,4]
Active and inert electrodes were made of gold and silver, respectively, and EGC-1700 was utilized as the hydrophobic fluoropolymer
A compliance current (CC) of 3 × 10−7 A was set to prevent the breakdown of the polymer at the positive voltage sweep[40,41]

Summary

Introduction

Hardware-based neural network systems have been drawing attention as potential candidates for realizing the generation of computing systems beyond von Neumann architectures[1,2,3,4]. The operating voltages for resistive switching were about 1.5 and −1.0 V for writing and erasing, respectively, and the current on/off ratio of the device was about 105, which is comparable to those of the inorganic ECM memristors with high performances[46,47].

Results

Conclusion