Abstract
Shallow fluorine-vacancy (FV) complexes in Si have been directly observed using variable-energy positron annihilation spectroscopy and secondary ion mass spectrometry. The FV complexes, introduced to combat the deactivation and transient-enhanced diffusion of ultrashallow boron, were observed in preamorphized Si wafers implanted with 0.5keV B and 10keV F ions at a dose of 1015cm−2, and then annealed isothermally at 800°C for times ranging from 1to2700s. The results are in agreement with a model which predicts that the complexes are of the form F3nVn, with n most probably being 1 and/or 2.
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