Abstract
The high-reliability requirement of 5 G electronic products poses a higher challenge to its protective films, the high transmission quality of high-frequency signals, excellent heat dissipation and anticorrosive capability, which promotes the ultra-thin protective films with good adhesion and anticorrosion. In this work, a nanometer-scale p-HMDSO film was obtained on the Cu alloy with hexamethyldisiloxane (HMDSO) as the precursor by the low-temperature RF-PECVD method. Compared with Parylene and p-PFDA (1H, 1H, 2H, 2H-Perfluorodecyl acrylate) films, the p-HMDSO film possesses better hydrophobicity, mechanical stability and anticorrosive property. The corrosion inhibition efficiency of the p-HMDSO film reaches 99.95%. Meanwhile, it provides 3 orders of magnitude increment of charge-transfer impedance, a salt spray corrosion resistance for 24 h, and the protection of 10 days in the 3.5 wt% NaCl solution, which develops a better application prospect in the protection of integrated electronics.
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