Abstract
Highly conductive transparent thin films of fluorine-doped SnO 2 (SnO 2:F) were prepared using spray pyrolysis. These films have a potential application in SIS-type photovoltaic solar cells because of their high transmission and low sheet resistance. The electrical resistivity is a minimum (about 5.4 × 10 −4 Ω cm) and the figure of merit is a maximum (about 10 −2) for SnO 2 films doped with 1.2 wt.% F. The optical data are interpreted to give a direct band gap of 4.27 eV and an indirect band gap of 2.73 eV. SnO 2:F films show high optical transmission in films of low sheet resistance (about 5 Ω/□) compared with the corresponding values for antimony-doped SnO 2 films.
Published Version
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