Fluorine-doped indium oxide (IFO) layers produced by ultrasonic spray pyrolysis as electron-selective contacts in IFO/SiOx/p-Si heterojunction crystalline silicon solar cells with an open-circuit voltage of 640 mV

Abstract

In this work, IFO/SiOx/(p-epi)/(p+)Cz-Si heterojunction solar cells have been fabricated by growing IFO on (p-epi)/(p+)Cz-Si epitaxial structures via ultrasonic spray pyrolysis, followed by annealing in a reducing ambient. We have examined the influence of the growth chamber/substrate preheating time (tph) before IFO growth and Si surface orientation on parameters of Suns-Voc characteristics. Optimizing tph, we have obtained an IFO/SiOx/p-Si heterojunction solar cell having an electron-selective contact and an open-circuit voltage of 640 mV, which is the highest value obtained to date for TCO/SiOx/c-Si heterojunction solar cells.