Fluorine doped indium oxide films for silicon solar cells

Abstract

The effect of conditions of preparation of the In 2O 3:F(IFO)/(pp +)Si solar cell (SC) by pyrosol method was systematically studied with the goal to maximize its photovoltage. Heterojunction IFO/(pp +)Si SC was obtained with the efficiency of 16.6% and photovoltage of 617 mV as well as the IFO/(n +pp +)Si SC with the efficiency of 19.2% using the following obtained optimal conditions: film-forming solution: 0.2 M InCl 3 + 0.05 M NH 4F + 0.1 M H 2O in methanol; carrier gas — Ar + 5% O 2; deposition temperature — 480 °C; duration of deposition — 2 min; two-minute annealing in argon with sprayed methanol at a temperature of 380 °C.