Abstract
Amorphous SiO 2 (a-SiO 2) was formed by liquid-phase deposition (LPD) at room temperature. As a result of one shot of ArF excimer laser irradiation, LPD-formed a-SiO 2 shows a threshold fluence for ablation of below than 200 mJ/cm 2, which is much lower than the threshold fluence (∼1 J/cm 2) of a-SiO 2 formed by thermal oxidation of silicon. Raman scattering spectroscopy revealed that two sharp lines at 495 cm −1 and 606 cm −1, respectively, labeled D 1 and D 2, had disappeared, and the main band at 430 cm −1 was sharpened in LPD-formed a-SiO 2. It is presumed that the fluorine broke the silica network, relaxing the Si–O–Si bond angle and dramatically reducing the threshold energy for ablation of a-SiO 2.
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