Abstract
Thin layers of the C 60F x molecules on the Si(111)-(7×7) surface have been investigated using scanning tunneling microscopy and high-resolution electron energy loss spectroscopy. The latter measurements indicated that the fluorine atoms are detached from C 60F x molecules and adsorb on the Si surface even at room temperature. The C 60F x molecules may release all fluorine atoms, either due to the oscillating motion of a trapped molecule or during their migration (rolling) on the Si surface. The diffusion of fluorine on the Si(111)-(7×7) surface and the initiation of etching in the areas of the higher fluorine concentration were observed at the lower temperature (∼300 °C) than that at isolated fluorine sites.
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