Abstract
Thin films of HPQC were processed using thermal deposition technique. The optical properties of the HPQC films were studied for application as optical sensor. The effect of film thickness and the effect of ultraviolet radiation on optical properties were studied. The emission properties of HPQC thin film are studied and it is found to have blue color emission. It was found that UV irradiation decreased the bandgap of HPQC film. A heterojunction device with the structure Au/HPQC/p-Si/Al was fabricated to perform as a photo diode. The characteristics of the heterogenous device were studied. The device was found to respond to temperature and illumination. The applicability of current limitation mechanisms in the reverse bias were studied. The responsivity and detectivity of the device to illumination were also studied and were found to act as functions of illumination power and voltage.
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