Abstract
Thermally oxidized silicon wafers are coated with monomolecular films of fluorescent cyanine dyes. The intensity of the fluorescence is studied as a function of the thickness of the oxide. Strong modulation is observed with vanishing fluorescence when the dye is located close to the silicon. The data are described by an optical theory considering the interference of the exciting light and of the emitted light. No contribution from an energy transfer to silicon is observed.
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