Fluorescence-enhanced Si photodiodes for ultraviolet C rays (UVC) measurements

Abstract

The ultraviolet C rays (UVC, wavelength λ = 100–280 nm) light generated by a Hg lamp (λ = 254 nm) and UVC light-emitting diodes (LEDs, λ = 265 and 275 nm) was detected using a fluorescence-enhanced silicon photodiode (FE-PD). Ce-doped yttrium aluminum garnet (YAG:Ce), YAG:Pr, YAG:Eu, YAG:Tb, YAG:Cr, Al2O3:Ti, Al2O3:Cr, MgAl2O4:Ti, MgAl2O4:Cr, MgAl2O4:Mn, and commercial fluorescent acrylic resins were tested as phosphor sources to enhance the output signal intensity of the FE-PD irradiated with UVC light. The resulting output signal intensity increased linearly with the UVC light strength, which was adjusted by raising the input current of the UVC LEDs from 0 to 40 mA. The sensitivity of the fabricated UVC detectors, assessed based on the calibration curve slope, varied depending on the phosphor materials. The phosphors effectively enhanced the output signal intensity of the FE-PD, which was up to six times greater than that of the visible and near infrared Si-PD without phosphors; the stronger output signal intensity was achieved using YAG:Tb, YAG:Cr, and a red fluorescent acrylic resin. The visible light emitted by phosphors under UVC irradiation is useful for detecting UVC light by the eye when using FE-PD.