Abstract
High-fluence ion implantation has been applied to create silica-based light-emitting nanocomposite for silicon photonics. Samples of SiO2/Si have been implanted with Sn ions (80 keV, 2.5 × 1016 cm−2, 5 × 1016cm−2 and 1 × 1017 ion/cm2) and afterwards annealed at 900 °C for 60 min in air ambient. The intense violet band at 3.2 eV dominates in photoluminescence (PL) end electroluminescence (EL) spectra. Its intensity decreases with the Sn concentration increase in silica. Besides, the PL spectra exhibit orange band which quenches after passing a charge flow (0.35C/cm2) through the samples. The origin of the observed emission as well as its degradation mechanisms are discussed.
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