Abstract
Detectors with hemispherical geometry are used to eliminate the contribution from the hole component to the signal of a detector based on a compound semiconductor operating at room temperature. In this work, the random process of charge induction on electrodes of a detector with hemispherical geometry is theoretically considered with allowance for capture of electrons by traps. Formulas are obtained for the first two moments of the distribution function for the induced charge on the detector electrodes. These formulas help analyze the contribution of the electron transport in detectors with hemispherical geometry.
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