Abstract

We consider two sequential models of deposition and aggregation for particles. The first model (No Diffusion) simulates surface diffusion through a deterministic capture area, while the second (Sequential Diffusion) allows the atoms to diffuse up to ℓ steps. Therefore the second model incorporates more fluctuations than the first, but still less than usual (Full Diffusion) models of deposition and diffusion on a crystal surface. We study the time dependence of the average densities of atoms and islands and the island size distribution. The Sequential Diffusion model displays a nontrivial steady-state regime where the island density increases and the island size distribution obeys scaling, much in the same way as the standard Full Diffusion model for epitaxial growth. Our results also allow to gain insight into the role of different types of fluctuations.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call