Fluctuation-induced tunneling dominated electrical transport in multi-layered single-walled carbon nanotube films

Abstract

Low temperature measurements may give some insight into the transport mechanism of single-walled carbon nanotube (SWCNT) films, which could lead to an optimal SWCNT film with designed photoelectric properties. Despite intense research efforts on the low temperature transport in SWCNT films, it is still an open question for the low temperature transport in multi-layered SWCNT films. In this work, the multi-layered SWCNT films were prepared with a layer by layer vacuum filtration. It suggests that the space between different layers of the multi-layered SWCNT can be ignored. For deposition of different-layered SWCNT films using the same total amount of SWCNT suspension, the increase of the layer numbers can reduce the density of the resulting films, which may account for the low temperature transport. The effect of thermal annealing and subsequent nitric acid treatment on the electrical properties of the SWCNT films has also been investigated. At the temperature range of 80–300 K, the transport of the multi-layered SWCNT films can be explained by a fluctuation-induced tunneling model. Our results could build a bridge connecting measured temperature coefficient of resistance and the microscopic tunneling barrier.