Abstract
We propose a generalization of the well-known fluctuation-induced tunneling conduction mechanism based on electron tunneling through finite segment(s) of nanoconstrictions whose transverse dimension is less than half the Fermi wavelength. By considering the effects of thermally induced voltage fluctuations across the nanoconstrictions, a temperature-dependent conductivity behavior is obtained which is in good agreement with the experiments, with reasonable parameter values. In the limit of high applied voltage the present model predicts interesting electronic Fabry-Perot behavior manifesting as peaks in differential conductance with linear variation in their voltage separations.
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