Abstract

Dislocation-free single crystals of silicon (diameter 10 mm, length 100 mm) have been grown by the floating zone technique using radiation heating in a closed double-ellipsoid mirror heating facility. The focused radiation of two halogen lamps served as energy source. Total power to maintain a molten zone of 10 mm diameter an 15 mm length is 800 W. The influence of the growth parameters on zone stability and on the formation of various micro-inhomogeneities, such as swirl defects, revealed by etching techniques and X-ray topography, is discussed. The experiments served as preparation for growing a Si crystal under microgravity aboard Spacelab.

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