Abstract
Single crystals of CrB 2 up to 2.4 cm in diameter were prepared by the floating-zone method with radio-frequency induction heating. The electromagnetic coupling between the work coil and the sample, i.e. the heating efficiency, was improved by 40% by preparing the thick crystal rod at a higher feed rate of the feed sintered rod. Under these improved growth conditions, the heating power was proportional to the crystal diameter. The CrB 2 crystal was used as a substrate for epitaxial growth of gallium nitride and aluminum nitride.
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