Abstract
We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm2·V−1·s−1. The increase in mobility was more significant as the length of Ni capping layer increased and the thickness of SnO active layer decreased. The observed phenomenon was possibly attributed to the changed vertical electric field distribution and increased hole concentration in the SnO channel by the floating Ni capping layer. Our experimental results demonstrate that incorporating the floating Ni capping layer on the channel layer is an effective method for increasing the field-effect mobility in p-channel SnO TFTs.
Highlights
Nowadays, oxide semiconductor-based thin-film transistors (TFTs) have gained significant attention as the backplane of various displays because of their merits including high mobility, good operational stability, low process temperature, and excellent uniformity [1,2,3,4,5,6]
Complementary logic circuits consisting of n- and p-channel transistors have advantages over n-channel logic ones in terms of static power consumption and noise immunity [11,12,13,14,15]; to use oxide TFTs in more diverse applications, it is crucial to improve the electrical properties of p-channel oxide TFTs
In the SnO TFT with the floating Ni capping layer, hole accumulation occurs at the work-function (Φ) of the deposited SnO thin-film as 4.68 eV using the Kelvin probe force microscopy both front (SnO-SiO2) and back (SnO-Ni) interfaces when the negative VGS is applied to the gate method (Model: KP Technology SKP5050)
Summary
Oxide semiconductor-based thin-film transistors (TFTs) have gained significant attention as the backplane of various displays because of their merits including high mobility, good operational stability, low process temperature, and excellent uniformity [1,2,3,4,5,6]. Despite intensive research, most p-channel SnO TFTs reported far exhibit low field-effect mobilities (μFEs ) of ~1–3 cm2 ·V−1 ·s−1 [29,30,31,32], limiting the development of oxide TFT-based advanced electronic systems. SnO TFT with a μFE of 10.5 cm2 ·V−1 ·s−1 utilizing a floating Ni capping layer. No study has yet reported the effects of using a metal capping layer in p-channel deposited with 100 nm thick indium-tin oxide (ITO) by using direct current magnetron sputtering; oxide TFTs. As far as we know, the μFE of 10.5 cm2 ·V−1 ·s−1 is the highest value reported in p-channel SnO the 70 nm thick Ni floating capping layer was deposited using an e-beam evaporation system. A SU-8 photoresist (thickness: 2 μm) was spin-coated as a
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