Abstract
A simple separate absorption and multiplication avalanche photodiode structure (SAM APD) has been developed which utilizes a single Zn diffusion to form both the active area of the device and a unique floating guard ring structure. The first devices of this type had gains of 11 and low dark currents.1 Recently devices with optimized ring structures have demonstrated increases in breakdown voltage over unguarded structures of at least 20 V and complete suppression of edge gain. Gains >35 at 2-µA and > 15 at 0.2- µa dark current have been observed under 1.3-/µm illumination in the devices. Total dark currents at 90% of breakdown (typically 0.9Vbis >70 V) were <10 nA. The simplicity of the fabrication process makes the device well suited to meeting the demand for high performance economical APDs for the fiber optic communications market.
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