Abstract
The floating base thyristor (FBT) is a new thyristor structure in which its p-base region, containing a p+ region, is not shorted to the n+ emitter. Using the DMOS process, an n-channel and a p-channel MOSFET are integrated with the thyristor structure. The device operates in the thyristor mode with a low ON-state voltage drop at even high current densities when a positive bias is applied to both gates. When a negative bias is applied to the OFF gate, the device operates in the IGBT mode with the saturated current controlled by the positive bias applied to the ON gate.
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