FLIP-CHIP INTERCONNECTION TO VARIOUS SUBSTRATES USING ANISOTROPIC CONDUCTIVE ADHESIVE FILMS

Abstract

Journal of Electronics ManufacturingVol. 05, No. 04, pp. 273-276 (1995) Papers from The International Seminar on Latest Achievements in Conductive Joining in Electronics Packaging, Philips, Eindhoven, The Netherlands, September 1995No AccessFLIP-CHIP INTERCONNECTION TO VARIOUS SUBSTRATES USING ANISOTROPIC CONDUCTIVE ADHESIVE FILMSITSUO WATANABE, KENZO TAKEMURA, NAOYUKI SHIOZAWA, OSAMU WATANABE, KAZUYOSHI KOJIMA and TOMOHISA OHTAITSUO WATANABEShimodate Research Laboratory, Hitachi Chemical Co., Ltd., Shimodate 308, Japan Search for more papers by this author , KENZO TAKEMURAShimodate Research Laboratory, Hitachi Chemical Co., Ltd., Shimodate 308, Japan Search for more papers by this author , NAOYUKI SHIOZAWAShimodate Research Laboratory, Hitachi Chemical Co., Ltd., Shimodate 308, Japan Search for more papers by this author , OSAMU WATANABEShimodate Research Laboratory, Hitachi Chemical Co., Ltd., Shimodate 308, Japan Search for more papers by this author , KAZUYOSHI KOJIMAShimodate Research Laboratory, Hitachi Chemical Co., Ltd., Shimodate 308, Japan Search for more papers by this author and TOMOHISA OHTAShimodate Research Laboratory, Hitachi Chemical Co., Ltd., Shimodate 308, Japan Search for more papers by this author https://doi.org/10.1142/S0960313195000281Cited by:14 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail AbstractFlip-chip interconnection to various substrates using ACF was investigated. It was demonstrated that the interconnection resistance of the joints made between gold bumps of the chip and Ni/Au coated pads on FR-4 boards was lower than 10 mΩ depending upon the kinds of conducting particles, although the interconnection was due to the mechanical contact between conducting particles and conductor surfaces. The current–voltage characteristics of the interconnection exhibited an ohmic behavior up to currents of 2000 mA per bump. In attaching bumpless chips to various substrates, the interconnection resistance strongly depended on the kinds of conducting particles and substrates. It was demonstrated that Ni particles were favorable for making good electrical contacts between Al pads of the bumpless chip and substrate electrodes. It was also demonstrated that low interconnection resistance in the range of 2 mΩ to 7 mΩ was obtained as well as with bumped chips, when FR-4 boards with Ni/Au bumped pads were used as substrates for interconnecting bumpless chips.Presented at The International Seminar on Latest Achievements in Conductive Joining in Electronics Packaging, Philips, Eindhoven, The Netherlands, September 1995. 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Kojima et al.Reliability of different flex materials in high density flip chip on flex applicationsP. Palm, J. Maattanen, Y. De Maquille, A. Picault and J. Vanfleteren et al.High-density interconnections in mobile phones using ACFP. Savolainen, l. Saarinen and O. Rusanen Recommended Vol. 05, No. 04 Metrics History Received 1 August 1995 Accepted 1 September 1995 PDF download