Abstract
GaN-based light-emitting diodes (LEDs) with mesh-contact electrodeshave been developed. The p-type ohmic contact layer is composed ofoxidized Ni/Au mesh and NiO overlay (20 Å). An Ag (3000 Å)omni-directional reflector covers the p-type contact. The n-typecontact is a Ti/Al planar film with a 10-μm-width Ti/Al stripe. TheTi/Al stripe surrounds the centre of LED mesa. With a 20-mA currentinjection, the light output power of GaN-based LEDs with mesh-contactelectrodes is 23% higher than that of the conventional LEDs.
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