Abstract
The low-frequency noise behavior in both the linear and saturation regimes of operation for fully depleted (FD) thin film SOI (silicon-on-insulator) MOSFETs is presented and compared to the noise of partially depleted (PD) thin film MOSFETs. Noise measurements were performed on n/sup +/ polysilicon gate n-channel transistors fabricated on SIMOX substrates with a buried oxide thickness of 3500 AA. In the linear region, the FD transistor was found to exhibit a dependence on the front gate voltage whereas in the saturation region the noise was found to be independent of gate bias. The PD device, on the other hand, exhibited noise characteristics which were independent of gate bias in both regimes of operation. The linear region noise characteristics of the FD MOSFET exhibited a dependence on the front and back gate bias due to the increase of the front surface electric field and a corresponding increase in the fraction of inversion charge at the surface. >
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