Abstract
The uni-axial compressive strain from e-SiGe S/D combined with dynamic body biases effect on flicker noise of pMOSFETs is presented in this paper. This compressive strain contributes higher mobility but the worse flicker noise in terms of higher S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ID</inf> /I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> becomes a potential killer to RF/analog circuits. Forward body biases (FBB) can reduce the flicker noise but the degraded body bias effect in strained pMOSFETs makes it not as efficient as the standard ones without strain. Hooge's mobility fluctuation model is adopted to explain the uni-axial strain and dynamic body biases effect on flicker noise. The increase of Hooge parameter α <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</inf> is identified the key factor responsible the degraded flicker noise in strained pMOSFETs.
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