Abstract
This letter reports on the low-frequency flicker-noise characteristics in fresh and electrically stressed pMOSFETs with thin strained-Si (~4 nm)/Si0.6Ge0.4 (~4 nm) dual-quantum-well (DQW) channel architectures. Normalized power spectral density (NPSD) of Id fluctuations (SID/Id 2) in fresh DQW devices exhibits significant improvement (by >102times) due to buried channel operation at low Vg. At high Vg, the NPSD enhancement reduces as carriers populate in the parasitic surface channel. Upon electrical stress, noise behavior in DQW devices was found to evolve from being carrier number-fluctuation dominated to mobility- fluctuation dominated. This was accompanied by the observation of a less-distinct buried-channel operation, indicating a potential stability issue of the Si/SiGe structure.
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