Abstract
Spectral density of "generation-recombination" noise voltage <δV<sup>2</sup><sub>gr</sub>> ("g-r noise") in Photoconductive Mercury-Cadmium Telluride / Hg<sub>1-x</sub>Cd<sub>x</sub>Te (PC MCT) infrared radiation detectors with absorber n-Hg<sub>1-x</sub>Cd<sub>x</sub>Te layer was calculated. Variations of <δV<sup>2</sup><sub>gr</sub>> with doping level (n ≈ Nd), ambient background flux density (Q<sub>bgr</sub>, T<sub>bgr</sub> ≈ 300 K), electrical bias (V<sub>b</sub>/I<sub>b</sub>) and design of sensitive pixel were analyzed. Spectral density of low-frequency noise as superposition of Flicker-noise "1/f", g-r noise resulting from fluctuations in generation-recombination rates of equilibrium (thermal) charge carriers <δV<sup>2</sup><sub>gr, th</sub>> and excess charge carriers exited by background photons <δV<sup>2</sup><sub>gr,bgr</sub>> and Johnson-Nyquist noise <δV<sup>2</sup><sub>JN</sub>> were examined in Hg<sub>1-x</sub>Cd<sub>x</sub>Te photoconductors based on MBE-grown multi-layer structures. Noise measurements were performed on Long-Wave (LWIR) PC MCT detectors with responsivity peak wavelength 10 ≤ λ<sub>p</sub> ≤ 12 μm at operating temperature Top ≈ 290-300 K and 78 K. Registration and recording of noise voltage spectral density graphs were performed in frequency range from 6 Hz to 12.5 kHz with resolution equals to 6 Hz. Tested PC MCT detectors show extremely low spectral density of excess Flicker-noise with cut-off frequency (F<sub>co</sub>) ranging from 10 to 300 Hz. Measured dependencies of g-r noise voltage spectral density are correlated with calculations.
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