Abstract
Strategies are presented to achieve ultrathin light-emitting diodes using the technique of epitaxial liftoff in ways that protect the materials from the etchants used for release and tether the devices to the underlying wafer for subsequent transfer printing onto substrates of interest. The results lead to an advanced interconnection scheme and vertical device layout that facilitate electrical contacts and system integration on flexible substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.