Flexible, transparent resistive switching device based on topological insulator Bi2Se3-organic composite

Abstract

Two-dimensional topological insulator bismuth selenide (Bi2Se3) nanosheets (NSs) embedded in poly-methyl methacrylate (PMMA) are employed for the first time for the resistive switching (RS) application. Hexagonal 2D Bi2Se3 NSs are synthesized by a simple solvothermal method and combine with PMMA at different weight percentages of 2D Bi2Se3. Field emission scanning electron microscopy and transmission electron microscopy along with other characterizations such as X-ray photoelectron spectroscopy and Raman spectroscopy were performed for the characterization of Bi2Se3@PMMA hybrid system. The composite was deposited on a transparent, flexible polyethylene terephthalate substrate to form Ag/Bi2Se3@PMMA/indium doped tin oxide memory cell. I-V characteristics of the device revealed a stable and non-volatile memory effect. The device shows a significantly high resistance (RHRS/RLRS) ratio, more than 103, high retention time (more than 9000 s) with high reproducibility over a large number of (105) ac cycles. From the experimental data, RS performances are explained by using a charge trapping–detrapping mechanism. Owing to the increasing interest in flexible electronics, bending tests are carried out at various bending diameters (10–30 mm) to show the mechanical robustness of the proposed device.