Abstract
This report describes the fabrication and resistive switching (RS) characteristics of a novel flexible transparent (FT) resistive random access memory (ReRAM) device with a Ag/indium–tin oxide (ITO) nanowire network/ITO capacitor deposited on a PDMS substrate. The transmittance of the device is ∼70% in the visible region, and it exhibits a stable high-resistance state (HRS) to low-resistance state (LRS) ratio (HRS/LRS ratio) in different bending states. The RS characteristics are attributed to the congregate state of oxygen vacancies at different voltages, and the difference between positive and negative bending is mainly contributed by the effect of stress on the conductive layer. The FT-ReRAM can be used as nonvolatile memory element in future flexible transparent devices.
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