Abstract
Flexible transparent junctionless thin film transistors gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated onto PET substrates at room temperature. These devices exhibit high-performance n-type transistor characteristics operating in enhancement mode with low operating voltage of 1.5 V due to the huge gate specific capacitance (0.44 μF cm−2 at 40 Hz) related to EDL formation. The electron field-effect mobility of 28.4 cm2 V−1 s−1, current on/off ratio and the subthreshold swing are found to be 5 × 106 and 0.1 V decade−1, respectively. These achievements demonstrate that flexible transparent junctionless thin-film transistors are promising for the next-generation low-power flexible transparent electronics applications.
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