Abstract
Top-illuminated structure facilitates the integration of organic photodetectors (OPDs) into high-resolution flexible wearable light detection systems by allowing the OPDs to be deposited on the bottom readout circuit. However, constructing this structure poses a challenge as it demands metallic electrodes with both high optical transparency and high electrical conductivity. But to achieve practical sheet resistances, most semitransparent metallic electrodes tend to reflect a large portion of incident light instead of allowing it to be absorbed by the photoactive layer of the OPDs. This, in turn, results in reduced photocurrent generation. To address this issue, a semiconducting germanium (Ge) film is introduced into a sliver (Ag) film, effectively reducing its reflectivity by lessening scattering. The Ge film also changes how the Ag film grows, further reducing its absorption by lowering the critical thickness needed for forming a continuous film. This approach yields a 10 nm metallic electrode with a transmittance of 70%, a reflectivity of 12%, and a sheet resistance of 35.5 Ω/□. Using this metallic electrode, flexible OPDs exhibit a high photo-to-dark current ratio of 2.9×104 and improved mechanical properties. This finding highlights the benefits of the top-illuminated structure, which effectively reduces losses caused by waveguided modes of the incident light.
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