Abstract
Flexible electronic devices operating in the GHz range is critical for applications like wireless communication and radars. GaN-based transistors have been extensively studied in rigid microwave electronics for high-frequency and high-power applications due to their superior properties of AlGaN/GaN heterostructure. Here, we review our recent research on flexible microwave electronics based on GaN HEMT, including high-performance flexible GaN HEMTs on conventional plastic substrates, biodegradable cellulose nanofibril substrates, and GaN HEMT-based flexible microwave circuits.
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