Abstract

Ferroelectric memories are endowed with high data storage density by nanostructure designing, while the robustness is also impaired. For organic ferroelectrics favored by flexible memories, low Curie transition temperature limits their thermal stability. Herein, a ferroelectric random access memory (FeRAM) is demonstrated based on an array of P(VDF‐TrFE) lamellae by self‐assembly. Written data shows enhanced thermal endurance up to 90 °C and undergoes 12 thermal cycles between 30 and 80 °C with little volatilization. The promoted thermal stability is attributed to pinning effect at interfaces between grain boundaries and lamellae, where charged domain walls and charged defects are coupled. These results provide a strategy for improving robustness of organic flexible FeRAMs, and reveal an attracting coupling effect between different phases of ferroelectric polymer.

Highlights

  • Ferroelectric memories are endowed with high data storage density by inorganic materials with flexible ferroelectric random access memory (FeRAM) devices is limited by the intrinsic brittlenanostructure designing, while the robustness is impaired

  • Ferroelectrics favored by flexible memories, low Curie transition temperature limits their thermal stability

  • These results provide a strategy for improving robustness of organic flexible FeRAMs, and reveal an attracting coupling effect between different phases of ferroelectric polymer

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Summary

Introduction

Ferroelectric memories are endowed with high data storage density by inorganic materials with flexible FeRAM devices is limited by the intrinsic brittlenanostructure designing, while the robustness is impaired. As the characteristic peak of β-phase P(VDF-TrFE) at 1288 cm−1 (symmetric stretching vibration of CF2) is observed in both SA and NSA films,[39] the 1400 cm−1 band corresponds to CH2 wagging vibration with dipole moment along c axis,[27] the weaker intensity in SA film indicates that polymer chains in lamellae are aligned parallel to the film surface (see Figure S4a, Supporting Information).

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