Abstract
Flexible thermoelectric (TE) devices have great potential in wearable electronics, but there is great challenge to realize robust TE device with high performance via feasible integration process. Herein, based on precisely printed copper patterns, a flexible pCu2Se-nAg2Se TE device is initially realized by in situ ion exchange reaction. The as-prepared Cu2Se and Ag2Se films possess typical hierarchical defects including atomic scale vacancies, the nanosheet fragments and microscale porous structure, which could significantly scatter phonons in wide frequency range. Accordingly, ultra-low thermal conductivity (Cu2Se: 0.13 W m−1 K−1; Ag2Se: 0.15 W m−1 K−1) and optimal ZTs (Cu2Se: 0.5; Ag2Se: 0.7) are achieved. Meanwhile, the as-fabricated pCu2Se-nAg2Se TE device exhibits an excellent power density of 13.4 W m−2 at a temperature gradient of 40 K, which is among the highest values of printed in-plane film devices. Furthermore, the good adhesion between TE films and porous PI substrate endowed excellent flexibility and stability of pCu2Se-nAg2Se devices.
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